Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPSC10H12G2Y-TR
Pin Count
2
Peak Reverse Current Ir
30μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
60A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
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Stock information temporarily unavailable.
€ 4,850.00
€ 4.85 Each (On a Reel of 1000) (Exc. Vat)
€ 5,868.50
€ 5.868 Each (On a Reel of 1000) (inc. VAT)
1000
€ 4,850.00
€ 4.85 Each (On a Reel of 1000) (Exc. Vat)
€ 5,868.50
€ 5.868 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPSC10H12G2Y-TR
Pin Count
2
Peak Reverse Current Ir
30μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
60A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
