Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 4.20
€ 2.10 Each (Supplied in a Tube) (Exc. Vat)
€ 5.08
€ 2.541 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
€ 4.20
€ 2.10 Each (Supplied in a Tube) (Exc. Vat)
€ 5.08
€ 2.541 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
2
| Quantity | Unit price | Per Tube |
|---|---|---|
| 2 - 18 | € 2.10 | € 4.20 |
| 20 - 98 | € 1.85 | € 3.70 |
| 100 - 198 | € 1.65 | € 3.30 |
| 200+ | € 1.40 | € 2.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
