STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin DPAK STD6N60M2

RS noliktavas nr.: 786-3615Ražotājs: STMicroelectronicsRažotāja kods: STD6N60M2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 10,50

€ 2,10 Katrs (Paka ir 5) (bez PVN)

€ 12,70

€ 2,541 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin DPAK STD6N60M2
Izvēlēties iepakojuma veidu

€ 10,50

€ 2,10 Katrs (Paka ir 5) (bez PVN)

€ 12,70

€ 2,541 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin DPAK STD6N60M2
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 2,10€ 10,50
25 - 45€ 2,00€ 10,00
50 - 120€ 1,80€ 9,00
125 - 245€ 1,65€ 8,25
250+€ 1,55€ 7,75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more