STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK STB30NF10T4

RS noliktavas nr.: 687-5194Ražotājs: STMicroelectronicsRažotāja kods: STB30NF10T4
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

9.35mm

Minimum Operating Temperature

-55 °C

Height

4.6mm

Produkta apraksts

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,75

€ 1,35 Katrs (Paka ir 5) (bez PVN)

€ 8,17

€ 1,634 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK STB30NF10T4
Izvēlēties iepakojuma veidu

€ 6,75

€ 1,35 Katrs (Paka ir 5) (bez PVN)

€ 8,17

€ 1,634 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK STB30NF10T4
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 1,35€ 6,75
10 - 95€ 1,15€ 5,75
100 - 495€ 0,895€ 4,48
500 - 995€ 0,763€ 3,82
1000+€ 0,636€ 3,18

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

9.35mm

Minimum Operating Temperature

-55 °C

Height

4.6mm

Produkta apraksts

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt