Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Stock information temporarily unavailable.
€ 297.00
€ 297.00 1 Tube of 30 (Exc. Vat)
€ 359.37
€ 359.37 1 Tube of 30 (inc. VAT)
1
€ 297.00
€ 297.00 1 Tube of 30 (Exc. Vat)
€ 359.37
€ 359.37 1 Tube of 30 (inc. VAT)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.