STMicroelectronics BDW93C NPN Darlington Transistor, 12 A 100 V HFE:100, 3-Pin TO-220

RS noliktavas nr.: 485-9042PRažotājs: STMicroelectronicsRažotāja kods: BDW93C
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum Continuous Collector Current

12 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

0.1mA

Minimum Operating Temperature

-65 °C

Height

9.15mm

Dimensions

10.4 x 4.6 x 9.15mm

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Produkta apraksts

NPN Darlington Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,15

Katrs (tiek piegadats Lente) (bez PVN)

€ 1,392

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

STMicroelectronics BDW93C NPN Darlington Transistor, 12 A 100 V HFE:100, 3-Pin TO-220
Izvēlēties iepakojuma veidu

€ 1,15

Katrs (tiek piegadats Lente) (bez PVN)

€ 1,392

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

STMicroelectronics BDW93C NPN Darlington Transistor, 12 A 100 V HFE:100, 3-Pin TO-220
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Lente
5 - 20€ 1,15€ 5,75
25 - 45€ 0,919€ 4,60
50 - 95€ 0,814€ 4,07
100 - 245€ 0,704€ 3,52
250+€ 0,692€ 3,46

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum Continuous Collector Current

12 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

0.1mA

Minimum Operating Temperature

-65 °C

Height

9.15mm

Dimensions

10.4 x 4.6 x 9.15mm

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Produkta apraksts

NPN Darlington Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more