N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630

RS noliktavas nr.: 486-0171Ražotājs: STMicroelectronicsRažotāja kods: IRF630
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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N-channel MOSFET,IRF630 9A 200V 50pcs
P.O.A.1 tubina no 50 (bez PVN)

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,55

Katrs (Paka ir 5) (bez PVN)

€ 1,876

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
Izvēlēties iepakojuma veidu

€ 1,55

Katrs (Paka ir 5) (bez PVN)

€ 1,876

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,55€ 7,75
25 - 45€ 1,50€ 7,50
50 - 120€ 1,35€ 6,75
125 - 245€ 1,20€ 6,00
250+€ 1,15€ 5,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF630 9A 200V 50pcs
P.O.A.1 tubina no 50 (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF630 9A 200V 50pcs
P.O.A.1 tubina no 50 (bez PVN)