N-channel MOSFET,IRF630 9A 200V 50pcs

RS noliktavas nr.: 368-3210Ražotājs: Fairchild SemiconductorRažotāja kods: IRF630
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Tehniskie dokumenti

Specifikācija

Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

74 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

10.4mm

Height

9.15mm

Width

4.6mm

Produkta apraksts

Molex BEAU Series Power Connectors

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Noliktavas stāvoklis patreiz nav pieejams

P.O.A.

N-channel MOSFET,IRF630 9A 200V 50pcs

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

N-channel MOSFET,IRF630 9A 200V 50pcs
Noliktavas stāvoklis patreiz nav pieejams

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

74 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

10.4mm

Height

9.15mm

Width

4.6mm

Produkta apraksts

Molex BEAU Series Power Connectors

Jūs varētu interesēt