N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Produkta apraksts
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,75
Katrs (tiek piegadats Lente) (bez PVN)
€ 2,12
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
10
€ 1,75
Katrs (tiek piegadats Lente) (bez PVN)
€ 2,12
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
10
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 10 - 49 | € 1,75 |
| 50 - 99 | € 1,65 |
| 100 - 249 | € 1,55 |
| 250+ | € 1,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Produkta apraksts
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products