N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF

RS noliktavas nr.: 178-0845Ražotājs: VishayRažotāja kods: IRFBG20PBF
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
€ 1,63Katrs (tiek piegadats Lente) (bez PVN)

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,25

Katrs (Tubina ir 50) (bez PVN)

€ 1,512

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF

€ 1,25

Katrs (Tubina ir 50) (bez PVN)

€ 1,512

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,25€ 62,50
100 - 200€ 1,05€ 52,50
250+€ 1,00€ 50,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
€ 1,63Katrs (tiek piegadats Lente) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
€ 1,63Katrs (tiek piegadats Lente) (bez PVN)