STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

RS noliktavas nr.: 880-5474Ražotājs: STMicroelectronicsRažotāja kods: STY145N65M5
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

138 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

414 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.3mm

Forward Diode Voltage

1.5V

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 44,90

€ 44,90 Katrs (bez PVN)

€ 54,33

€ 54,33 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5
Izvēlēties iepakojuma veidu

€ 44,90

€ 44,90 Katrs (bez PVN)

€ 54,33

€ 54,33 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

138 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

414 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.3mm

Forward Diode Voltage

1.5V

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more