bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
363nC
Maximum Power Dissipation Pd
625W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Noliktavas stāvoklis patreiz nav pieejams
€ 35,80
€ 35,80 Katrs (tiek piegadats Tubina) (bez PVN)
€ 43,32
€ 43,32 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
1
€ 35,80
€ 35,80 Katrs (tiek piegadats Tubina) (bez PVN)
€ 43,32
€ 43,32 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
1
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
363nC
Maximum Power Dissipation Pd
625W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.