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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-247
Series
STW
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
40.92mm
Height
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Noliktavas stāvoklis patreiz nav pieejams
€ 17,80
€ 17,80 Katrs (tiek piegadats Penali) (bez PVN)
€ 21,54
€ 21,54 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
€ 17,80
€ 17,80 Katrs (tiek piegadats Penali) (bez PVN)
€ 21,54
€ 21,54 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Paplāte)
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-247
Series
STW
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
40.92mm
Height
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
