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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Maximum Operating Temperature
150°C
Standards/Approvals
UL
Length
40.92mm
Height
5.1mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Noliktavas stāvoklis patreiz nav pieejams
€ 17,80
€ 17,80 Katrs (tiek piegadats Penali) (bez PVN)
€ 21,54
€ 21,54 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
€ 17,80
€ 17,80 Katrs (tiek piegadats Penali) (bez PVN)
€ 21,54
€ 21,54 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Paplāte)
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Maximum Operating Temperature
150°C
Standards/Approvals
UL
Length
40.92mm
Height
5.1mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
