bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
139mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
64nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Noliktavas stāvoklis patreiz nav pieejams
€ 6,20
€ 6,20 Katrs (tiek piegadats Tubina) (bez PVN)
€ 7,50
€ 7,50 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
1
€ 6,20
€ 6,20 Katrs (tiek piegadats Tubina) (bez PVN)
€ 7,50
€ 7,50 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
1
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 6,20 |
| 10 - 99 | € 3,55 |
| 100+ | € 3,45 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
139mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
64nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.