STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z

RS noliktavas nr.: 485-8572Ražotājs: STMicroelectronicsRažotāja kods: STW10NK80Z
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Width

5.15mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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N-channel MOSFET,2SK2607 9A 800V
P.O.A.Katrs (bez PVN)
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€ 5,70

€ 5,70 Katrs (bez PVN)

€ 6,90

€ 6,90 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z
Izvēlēties iepakojuma veidu

€ 5,70

€ 5,70 Katrs (bez PVN)

€ 6,90

€ 6,90 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cena
1 - 9€ 5,70
10 - 24€ 5,20
25 - 99€ 4,85
100 - 499€ 3,90
500+€ 3,45

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,2SK2607 9A 800V
P.O.A.Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Width

5.15mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,2SK2607 9A 800V
P.O.A.Katrs (bez PVN)