bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
25nC
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Noliktavas stāvoklis patreiz nav pieejams
€ 1 490,00
€ 0,596 Katrs (Rulli ir 2500) (bez PVN)
€ 1 802,90
€ 0,721 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 1 490,00
€ 0,596 Katrs (Rulli ir 2500) (bez PVN)
€ 1 802,90
€ 0,721 Katrs (Rulli ir 2500) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2500
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
25nC
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.