bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 9,46
€ 0,946 Katrs (Paka ir 10) (bez PVN)
€ 11,45
€ 1,145 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 9,46
€ 0,946 Katrs (Paka ir 10) (bez PVN)
€ 11,45
€ 1,145 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.