bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.5mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 10,50
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 12,70
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 10,50
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 12,70
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
10
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.5mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.