bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 94,75
€ 0,341 Katrs (tiek piegadats Rulli) (bez PVN)
€ 114,65
€ 0,413 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
250
€ 94,75
€ 0,341 Katrs (tiek piegadats Rulli) (bez PVN)
€ 114,65
€ 0,413 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
250
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 500 - 1200 | € 0,341 | € 17,05 |
| 1250+ | € 0,28 | € 14,00 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.