bez PVN
ar PVN
Meklējiet produktu, ražotāja kodu vai ražotāju
Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Noliktavas stāvoklis patreiz nav pieejams
€ 7 350,00
€ 2,45 Katrs (Rulli ir 3000) (bez PVN)
€ 8 893,50
€ 2,964 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 7 350,00
€ 2,45 Katrs (Rulli ir 3000) (bez PVN)
€ 8 893,50
€ 2,964 Katrs (Rulli ir 3000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
