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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1550A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Noliktavas stāvoklis patreiz nav pieejams
€ 459,00
€ 15,30 Katrs (Tubina ir 30) (bez PVN)
€ 555,39
€ 18,513 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 459,00
€ 15,30 Katrs (Tubina ir 30) (bez PVN)
€ 555,39
€ 18,513 Katrs (Tubina ir 30) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1550A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
