bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
10.58mm
Length
15.95mm
Height
4.3mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Noliktavas stāvoklis patreiz nav pieejams
€ 8 700,00
€ 8,70 Katrs (Rulli ir 1000) (bez PVN)
€ 10 527,00
€ 10,527 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 8 700,00
€ 8,70 Katrs (Rulli ir 1000) (bez PVN)
€ 10 527,00
€ 10,527 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
10.58mm
Length
15.95mm
Height
4.3mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.