bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
800μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
850A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Width
10.4mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Noliktavas stāvoklis patreiz nav pieejams
€ 4,25
€ 4,25 Katrs (bez PVN)
€ 5,14
€ 5,14 Katrs (Ieskaitot PVN)
1
€ 4,25
€ 4,25 Katrs (bez PVN)
€ 5,14
€ 5,14 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
800μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
850A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Width
10.4mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
