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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
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Noliktavas stāvoklis patreiz nav pieejams
€ 162,50
€ 3,25 Katrs (Tubina ir 50) (bez PVN)
€ 196,62
€ 3,932 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 162,50
€ 3,25 Katrs (Tubina ir 50) (bez PVN)
€ 196,62
€ 3,932 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
