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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
425μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
650A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
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€ 2,20
€ 2,20 Katrs (bez PVN)
€ 2,66
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1
€ 2,20
€ 2,20 Katrs (bez PVN)
€ 2,66
€ 2,66 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1
Ideate. Create. Collaborate
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
425μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
650A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
