bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Typical Gate Charge Qg @ Vgs
25.9nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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Noliktavas stāvoklis patreiz nav pieejams
€ 9,40
€ 2,50 Katrs (tiek piegadats Tubina) (bez PVN)
€ 11,37
€ 3,02 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
2
€ 9,40
€ 2,50 Katrs (tiek piegadats Tubina) (bez PVN)
€ 11,37
€ 3,02 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
2
| Daudzums | Vienības cena |
|---|---|
| 10 - 99 | € 2,50 |
| 100 - 499 | € 2,30 |
| 500+ | € 2,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Typical Gate Charge Qg @ Vgs
25.9nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
