bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 25,00
€ 1,45 Katrs (tiek piegadats Tubina) (bez PVN)
€ 30,25
€ 1,754 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 25,00
€ 1,45 Katrs (tiek piegadats Tubina) (bez PVN)
€ 30,25
€ 1,754 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
10
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 245 | € 1,45 | € 7,25 |
| 250 - 495 | € 1,05 | € 5,25 |
| 500+ | € 0,806 | € 4,03 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.