bez PVN
ar PVN

Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Noliktavas stāvoklis patreiz nav pieejams
€ 38,00
€ 7,60 Katrs (Paka ir 5) (bez PVN)
€ 45,98
€ 9,196 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 38,00
€ 7,60 Katrs (Paka ir 5) (bez PVN)
€ 45,98
€ 9,196 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.