bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 44,00
€ 3,90 Katrs (tiek piegadats Tubina) (bez PVN)
€ 53,24
€ 4,719 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 44,00
€ 3,90 Katrs (tiek piegadats Tubina) (bez PVN)
€ 53,24
€ 4,719 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
10
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 20 - 98 | € 3,90 | € 7,80 |
| 100 - 198 | € 3,45 | € 6,90 |
| 200+ | € 3,00 | € 6,00 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.