bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Output Current
18.5A
Pin Count
3
Fall Time
40ns
Package Type
TO-220
Driver Type
MOSFET
Rise Time
27ns
Minimum Supply Voltage
3V
Maximum Supply Voltage
30V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Width
5.15mm
Mount Type
Through Hole
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
Noliktavas stāvoklis patreiz nav pieejams
€ 270,00
€ 5,40 Katrs (Tubina ir 50) (bez PVN)
€ 326,70
€ 6,534 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 270,00
€ 5,40 Katrs (Tubina ir 50) (bez PVN)
€ 326,70
€ 6,534 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Output Current
18.5A
Pin Count
3
Fall Time
40ns
Package Type
TO-220
Driver Type
MOSFET
Rise Time
27ns
Minimum Supply Voltage
3V
Maximum Supply Voltage
30V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Width
5.15mm
Mount Type
Through Hole
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.