bez PVN
ar PVN
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Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
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Noliktavas stāvoklis patreiz nav pieejams
€ 8,60
€ 4,30 Katrs (tiek piegadats Tubina) (bez PVN)
€ 10,41
€ 5,203 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
2
€ 8,60
€ 4,30 Katrs (tiek piegadats Tubina) (bez PVN)
€ 10,41
€ 5,203 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
2
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 2 - 18 | € 4,30 | € 8,60 |
| 20 - 98 | € 3,80 | € 7,60 |
| 100 - 198 | € 3,40 | € 6,80 |
| 200+ | € 2,90 | € 5,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
