bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 15,00
€ 3,00 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,15
€ 3,63 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
€ 15,00
€ 3,00 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,15
€ 3,63 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
5
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 5 - 45 | € 3,00 | € 15,00 |
| 50 - 120 | € 2,75 | € 13,75 |
| 125+ | € 2,30 | € 11,50 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.