bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Noliktavas stāvoklis patreiz nav pieejams
€ 12,50
€ 1,25 Katrs (tiek piegadats Tubina) (bez PVN)
€ 15,12
€ 1,512 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 12,50
€ 1,25 Katrs (tiek piegadats Tubina) (bez PVN)
€ 15,12
€ 1,512 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
10
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.