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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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Noliktavas stāvoklis patreiz nav pieejams
€ 1 320,00
€ 0,33 Katrs (Rulli ir 4000) (bez PVN)
€ 1 597,20
€ 0,399 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 1 320,00
€ 0,33 Katrs (Rulli ir 4000) (bez PVN)
€ 1 597,20
€ 0,399 Katrs (Rulli ir 4000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
4000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
