bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 77,50
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 93,78
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 77,50
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 93,78
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
50
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 100 - 490 | € 1,05 | € 10,50 |
| 500+ | € 0,872 | € 8,72 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.