bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Produkta Apraksts
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Noliktavas stāvoklis patreiz nav pieejams
€ 11,00
€ 1,10 Katrs (Paka ir 10) (bez PVN)
€ 13,31
€ 1,331 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 11,00
€ 1,10 Katrs (Paka ir 10) (bez PVN)
€ 13,31
€ 1,331 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 1,10 | € 11,00 |
| 100 - 490 | € 0,748 | € 7,48 |
| 500+ | € 0,613 | € 6,13 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Produkta Apraksts
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.