bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.5A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK
Series
MDmesh
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
9Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Typical Gate Charge Qg @ Vgs
29.3nC
Maximum Gate Source Voltage Vgs
-30, +30V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Produkta Apraksts
Noliktavas stāvoklis patreiz nav pieejams
€ 54,00
Katrs (tiek piegadats Rulli) (bez PVN)
€ 65,34
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 54,00
Katrs (tiek piegadats Rulli) (bez PVN)
€ 65,34
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
10
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.5A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK
Series
MDmesh
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
9Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Typical Gate Charge Qg @ Vgs
29.3nC
Maximum Gate Source Voltage Vgs
-30, +30V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Produkta Apraksts