bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 9,60
€ 4,80 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,62
€ 5,808 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
2
€ 9,60
€ 4,80 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,62
€ 5,808 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
2
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 2 - 18 | € 4,80 | € 9,60 |
| 20 - 98 | € 4,25 | € 8,50 |
| 100 - 198 | € 3,80 | € 7,60 |
| 200+ | € 3,25 | € 6,50 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.