bez PVN
ar PVN
Meklējiet produktu, ražotāja kodu vai ražotāju
Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
150A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
750W
Package Type
Max247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Noliktavas stāvoklis patreiz nav pieejams
€ 273,00
€ 9,10 Katrs (Tubina ir 30) (bez PVN)
€ 330,33
€ 11,011 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 273,00
€ 9,10 Katrs (Tubina ir 30) (bez PVN)
€ 330,33
€ 11,011 Katrs (Tubina ir 30) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
150A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
750W
Package Type
Max247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
