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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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Noliktavas stāvoklis patreiz nav pieejams
€ 15,25
€ 3,05 Katrs (Paka ir 5) (bez PVN)
€ 18,45
€ 3,69 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 15,25
€ 3,05 Katrs (Paka ir 5) (bez PVN)
€ 18,45
€ 3,69 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 45 | € 3,05 | € 15,25 |
| 50 - 120 | € 2,80 | € 14,00 |
| 125+ | € 2,35 | € 11,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
