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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Noliktavas stāvoklis patreiz nav pieejams
€ 90,00
€ 3,00 Katrs (Tubina ir 30) (bez PVN)
€ 108,90
€ 3,63 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 90,00
€ 3,00 Katrs (Tubina ir 30) (bez PVN)
€ 108,90
€ 3,63 Katrs (Tubina ir 30) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
