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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Length
15.75mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
€ 5,60
€ 5,60 Katrs (bez PVN)
€ 6,78
€ 6,78 Katrs (Ieskaitot PVN)
Standarts
1
€ 5,60
€ 5,60 Katrs (bez PVN)
€ 6,78
€ 6,78 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
Ideate. Create. Collaborate
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Length
15.75mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
