bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
14.8mm
Standards/Approvals
ECOPACK
Width
15.75mm
Series
V
Height
20.15mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
€ 55,00
Katrs (tiek piegadats Tubina) (bez PVN)
€ 66,55
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 55,00
Katrs (tiek piegadats Tubina) (bez PVN)
€ 66,55
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
14.8mm
Standards/Approvals
ECOPACK
Width
15.75mm
Series
V
Height
20.15mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
