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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
€ 27,00
€ 5,40 Katrs (Paka ir 5) (bez PVN)
€ 32,67
€ 6,534 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 27,00
€ 5,40 Katrs (Paka ir 5) (bez PVN)
€ 32,67
€ 6,534 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
