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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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Noliktavas stāvoklis patreiz nav pieejams
€ 26,40
€ 26,40 Katrs (bez PVN)
€ 31,94
€ 31,94 Katrs (Ieskaitot PVN)
Standarts
1
€ 26,40
€ 26,40 Katrs (bez PVN)
€ 31,94
€ 31,94 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
