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ar PVN
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Detaļu saraksts
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Noliktavas stāvoklis patreiz nav pieejams
€ 9,00
€ 1,80 Katrs (Paka ir 5) (bez PVN)
€ 10,89
€ 2,178 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 9,00
€ 1,80 Katrs (Paka ir 5) (bez PVN)
€ 10,89
€ 2,178 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 1,80 | € 9,00 |
| 10 - 20 | € 1,70 | € 8,50 |
| 25+ | € 1,65 | € 8,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
