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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
11A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
28W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
€ 21,50
€ 1,35 Katrs (tiek piegadats Tubina) (bez PVN)
€ 26,02
€ 1,634 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 21,50
€ 1,35 Katrs (tiek piegadats Tubina) (bez PVN)
€ 26,02
€ 1,634 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
10
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 245 | € 1,35 | € 6,75 |
| 250 - 495 | € 1,00 | € 5,00 |
| 500+ | € 0,913 | € 4,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
11A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
28W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
