bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
200A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
N
Pin Count
4
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Operating Temperature
150°C
Standards/Approvals
ECOPACK, JESD97
Width
31.7mm
Series
Powermesh
Length
38.2mm
Height
12.2mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
€ 30,60
€ 30,60 Katrs (bez PVN)
€ 37,03
€ 37,03 Katrs (Ieskaitot PVN)
Standarts
1
€ 30,60
€ 30,60 Katrs (bez PVN)
€ 37,03
€ 37,03 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
200A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
N
Pin Count
4
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Operating Temperature
150°C
Standards/Approvals
ECOPACK, JESD97
Width
31.7mm
Series
Powermesh
Length
38.2mm
Height
12.2mm
Automotive Standard
No
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
