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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
RoHS
Length
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Izcelsmes valsts
China
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8,50
€ 0,85 Katrs (Paka ir 10) (bez PVN)
€ 10,28
€ 1,028 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 8,50
€ 0,85 Katrs (Paka ir 10) (bez PVN)
€ 10,28
€ 1,028 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
RoHS
Length
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Izcelsmes valsts
China
Produkta Apraksts
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
