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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Noliktavas stāvoklis patreiz nav pieejams
€ 1 600,00
€ 1,60 Katrs (Rulli ir 1000) (bez PVN)
€ 1 936,00
€ 1,936 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 1 600,00
€ 1,60 Katrs (Rulli ir 1000) (bez PVN)
€ 1 936,00
€ 1,936 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
